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Cu&Al Diamond Composite Material
Product Performance Benchmark
Typical Application for Package Carrier
Typical Application for Module Case
GaN on SiC RF Epi Wafer
The standard RF Epi structure
The InAlGaN barrier RF EPi structure
Cross Reference
Applications
Low-altitude Economy
Design Support
Sample
News
About Us
Who we are
Contact Us
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GaN IMFET
GaN IMFET
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GaN IMFET
GaAs IMFET
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GaN PA (Package）
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High Power Switch
GaN IMFET
RF Products
Internal-Matched Amplifiers
GaN IMFET
GaAs IMFET
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GaN Pre-Matched Amplifiers
Power Amplifier MMICs
GaN PA (Package）
GaN PA(Die)
GaAs PA (Package）
GaAs Saturated PA (Die）
GaAs Single-Supply PA (Die)
GaAs Linear PA (Die)
Drivers
GaAs Drivers ( Package)
High Power Switch
High Power Switch
Parametric Search Selector
Part Number
Images
Frequency Range (MHz)
Psat (dBm)
P-1 (dBm)
Gp (dB)
Work Efficiency η（%）
Vd(d)
Gain Flatness
Mode
Pulse indicators
Package
Status
MCNI090100-P43
MCNI090100-P43
9000-10000
43
8
35
28
±0.8
CW
IB
MCNI090100-P44
MCNI090100-P44
9000-10000
44
7.5
40
28
±0.8
CW
IB
MCNI090100-P45
MCNI090100-P45
9000-10000
45
7
30
28
±0.8
CW
IK
MCNI090100-P46
MCNI090100-P46
9000-10000
46
8.5
35
28
±0.8
CW
IK
MCNI090100-P47
MCNI090100-P47
9000-10000
47
7
30
28
±0.8
CW
IK
MCNI090100-P50
MCNI090100-P50
9000-10000
50
8
35
28
±0.8
Pulse
IK
MCNI090100-P51
MCNI090100-P51
9000-10000
51
8
35
28
±0.8
Pulse
T=1ms, Duty=10%
IK
MCNI090100-P52
MCNI090100-P52
9000-10000
52
8
35
28
±0.8
Pulse
IK
MCNI090100-P53
MCNI090100-P53
9000-10000
53
7
38
32
±0.8
Pulse
T=1ms, Duty=10%
IK
MCNI090100-P54
MCNI090100-P54
9000-10000
54
8
40
36
±0.8
Pulse
T=1ms, Duty=10%
IK
MCNI090100-P55
MCNI090100-P55
9000-10000
55
8
45
40
±0.8
Pulse
T=1ms, Duty=20%
IK
MCNI091093-P44
MCNI091093-P44
9100-9300
44
7.5
40
28
±0.8
CW
IB
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