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Cu&Al Diamond Composite Material
Product Performance Benchmark
Typical Application for Package Carrier
Typical Application for Module Case
GaN on SiC RF Epi Wafer
The standard RF Epi structure
The InAlGaN barrier RF EPi structure
Cross Reference
Applications
Low-altitude Economy
Design Support
Sample
News
About Us
Who we are
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GaN PA(Die)
GaN PA(Die)
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RF Products
Internal-Matched Amplifiers
GaN IMFET
GaAs IMFET
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GaN PA (Package)
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High Power Switch
GaN PA(Die)
RF Products
Internal-Matched Amplifiers
GaN IMFET
GaAs IMFET
Pre-Matched Amplifiers
GaN Pre-Matched Amplifiers
Power Amplifier MMICs
GaN PA (Package)
GaN PA(Die)
GaAs PA (Package)
GaAs Saturated PA (Die)
GaAs Single-Supply PA (Die)
GaAs Linear PA (Die)
Drivers
GaAs Drivers ( Package)
High Power Switch
High Power Switch
Parametric Search Selector
Part Number
Images
Frequency Range (MHz)
Psat (dBm)
Gp (dB)
PAE (%)
Current (mA)
Supply Voltage (V)
Mode
Pulse indicators
Size(mm)
Status
MCNMPA00802-P44
MCNMPA00802-P44
800-2000
44
18
55
2400
28
Pulse/CW
T=100us, Duty=10%
3.4 ×3.5
MCNMPA00806-P41
MCNMPA00806-P41
800-6000
41
21
46.5
1300
28
Pulse
T=100us, Duty=10%
3.4 ×2.4
MCNMPA021022-P41
MCNMPA021022-P41
2100-2200
41
20
50
1200
20/28
CW
4.2 ×3.2 ×0.08
MCNMPA0218-P40
MCNMPA0218-P40
2000-18000
40
15
23
1800
28
CW
3.2 ×4.8
MCNMPA0204-P47
MCNMPA0204-P47
2000-4000
47
21
53
4800
28
Pulse/CW
T=100us, Duty=10%
3.2 ×4.8
MCNMPA0204-P44.5
MCNMPA0204-P44.5
2000-4000
44.5
21.5
53
2300
28
Pulse
T=100us, Duty=10%
2.6 ×2.6
MCNMPA0213-P40
MCNMPA0213-P40
2000-13000
40
15
29
1800
28
CW
3.2 ×4.0
MCNMPA0206-P44
MCNMPA0206-P44
2000-6000
44
21
44
2600
28
CW
3.2 ×4.2
MCNMPA0206-P41
MCNMPA0206-P41
2000-6000
41
22
46
1500
28
CW
2.6 ×2.6
MCNMPA0206-P46
MCNMPA0206-P46
2000-6000
46
19
36
5000
28
CW
3.2 ×4.8
MCNMPA0206-P38
MCNMPA0206-P38
2000-6000
38
21
48
480
28
CW
2.3 × 1.9
MCNMPA0206-P35
MCNMPA0206-P35
2000-6000
35
22
48
340
28
CW
2.3 × 1.5
1
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