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Product Performance Benchmark
Typical Application for Package Carrier
Typical Application for Module Case
GaN on SiC RF Epi Wafer
The standard RF Epi structure
The InAlGaN barrier RF EPi structure
Cross Reference
Applications
Low-altitude Economy
Design Support
Sample
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GaAs Saturated PA (Die)
GaAs Saturated PA (Die)
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RF Products
Internal-Matched Amplifiers
GaN IMFET
GaAs IMFET
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GaAs Saturated PA (Die)
RF Products
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GaN IMFET
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GaN PA (Package)
GaN PA(Die)
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GaAs Saturated PA (Die)
GaAs Single-Supply PA (Die)
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GaAs Drivers ( Package)
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Part Number
Images
Frequency Range (MHz)
Psat (dBm)
Gp (dB)
PAE (%)
Current (mA)
Supply Voltage (V)
Mode
Pulse indicators
Size(mm)
Status
MCCMPA00902-P26
MCCMPA00902-P26
900-2000
26
18
39
145
8
CW
2.5 ×2.0
MCCMPA0218-P27
MCCMPA0218-P27
2000-18000
27
12
31
350
5
CW
1.75 ×2.60
MCCMPA0206-P29.5
MCCMPA0206-P29.5
2000-6000
29.5
21.5
42
600
5
CW
2.8 ×2.1
MCCMPA027035-P34
MCCMPA027035-P34
2700-3500
34
25
42
800
8
CW
2.5 ×2.0
MCCMPA03127-P28
MCCMPA03127-P28
3000-12700
28
16
32.5
250
8
CW
2.5 ×3.0
MCCMPA045055-P32.5
MCCMPA045055-P32.5
4500-5500
32.5
22.5
42
950
5
CW
2.5 ×2.2
MCCMPA075115-P32.5
MCCMPA075115-P32.5
7500-11500
32.5
32.5
49
450
8
Pulse
T=100us,Duty=10%
2.6 ×1.8
MCCMPA075115-P33
MCCMPA075115-P33
7500-11500
33
26
51
527
8
Pulse
T=100us,Duty=10%
3.0 ×2.4
MCCMPA0811-P37.5
MCCMPA0811-P37.5
8000-11000
37.5
29.5
50
1550
8
Pulse
T=100us,Duty=10%
3.5 ×3.0
MCCMPA0812-P31
MCCMPA0812-P31
8000-12000
31
29
44
370
8
Pulse
T=100us,Duty=10%
3.5 ×1.75
MCCMPA0812-P34
MCCMPA0812-P34
8000-12000
34
29
43
750
8
Pulse
T=100us,Duty=10%
3.5 ×2.5
MCCMP0A85105-P36
MCCMP0A85105-P36
8500-10500
36
28
52.5
1100
8
Pulse
T=100us,Duty=10%
3.0 ×2.4
1
2
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