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Product Performance Benchmark
Typical Application for Package Carrier
Typical Application for Module Case
GaN on SiC RF Epi Wafer
The standard RF Epi structure
The InAlGaN barrier RF EPi structure
Cross Reference
Applications
Low-altitude Economy
Design Support
Sample
News
About Us
Who we are
Contact Us
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GaN IMFET
GaN IMFET
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GaN IMFET
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GaN PA (Package）
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High Power Switch
GaN IMFET
RF Products
Internal-Matched Amplifiers
GaN IMFET
GaAs IMFET
Pre-Matched Amplifiers
GaN Pre-Matched Amplifiers
Power Amplifier MMICs
GaN PA (Package）
GaN PA(Die)
GaAs PA (Package）
GaAs Saturated PA (Die）
GaAs Single-Supply PA (Die)
GaAs Linear PA (Die)
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GaAs Drivers ( Package)
High Power Switch
High Power Switch
Parametric Search Selector
Part Number
Images
Frequency Range (MHz)
Psat (dBm)
P-1 (dBm)
Gp (dB)
Work Efficiency η（%）
Vd(d)
Gain Flatness
Mode
Pulse indicators
Package
Status
MCNI080090-P48
MCNI080090-P48
8000-9000
48
8.5
36
28
±0.8
CW
IK
MCNI080090-P50
MCNI080090-P50
8000-9000
50
8
38
28
±0.8
Pulse
T=1ms, Duty=10%
IK-2
MCNI080097-P45-1
MCNI080097-P45-1
8000-9700
45
8
35
28
±0.8
CW
IB
MCNI084085-P43
MCNI084085-P43
8400-8500
43
9
38
28
±0.8
CW
IB
MCNI084085-P50
MCNI084085-P50
8400-8500
50
8
35
28
±0.8
CW
IK
MCNI084092-P52
MCNI084092-P52
8400-9200
52
8
36
28
±0.8
Pulse
T=1ms, Duty=10%
IK
MCNI084096-P52
MCNI084096-P52
8400-9600
52
8
36
28
±0.8
Pulse
T=1ms, Duty=10%
IK
MCNI085096-P37
MCNI085096-P37
8500-9600
37
8
36
28
±0.8
CW
IB
MCNI085096-P40
MCNI085096-P40
8500-9600
40
8
36
28
±0.8
CW
IB
MCNI085096-P43
MCNI085096-P43
8500-9600
43
8
40
28
±0.8
Pulse
T=1.2ms,Duty=25%
IB
MCNI085096-P45
MCNI085096-P45
8500-9600
45
8
36
28
±0.8
CW
IK
MCNI085096-P47
MCNI085096-P47
8500-9600
47
8
36
28
±0.8
CW
IK
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