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Product Performance Benchmark
Typical Application for Package Carrier
Typical Application for Module Case
GaN on SiC RF Epi Wafer
The standard RF Epi structure
The InAlGaN barrier RF EPi structure
Cross Reference
Applications
Low-altitude Economy
Design Support
Sample
News
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GaN IMFET
GaN IMFET
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GaN IMFET
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GaN IMFET
RF Products
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GaN IMFET
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GaN Pre-Matched Amplifiers
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GaN PA (Package)
GaN PA(Die)
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GaAs Saturated PA (Die)
GaAs Single-Supply PA (Die)
GaAs Linear PA (Die)
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GaAs Drivers ( Package)
High Power Switch
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Parametric Search Selector
Part Number
Images
Frequency Range (MHz)
Psat (dBm)
P-1 (dBm)
Gp (dB)
Work Efficiency η(%)
Vd(d)
Gain Flatness
Mode
Pulse indicators
Package
Status
MCNI007010-P46.5
MCNI007010-P46.5
700-1000
46.5
14.5
60
28
±0.8
CW
IK-2
MCNI007015-P48
MCNI007015-P48
700-1500
48
12
55
28
±0.8
CW
IH
MCNI00750152-P49
MCNI00750152-P49
750-1525
49
12
55
28
±0.8
CW
IH
MCNI008020-P42
MCNI008020-P42
800-2000
42
10
45
28
±0.8
CW
IK-2
MCNI008020-P45
MCNI008020-P45
800-2000
45
12
45
48
±0.8
CW
IK-2
MCNI008020-P46
MCNI008020-P46
800-2000
46
10
50
28
±0.8
CW
IK-2
MCNI00860093-P47
MCNI00860093-P47
860-930
47
13
55
28
±0.8
CW
IK-2
MCNI009014-P45
MCNI009014-P45
900-1400
45
14
60
50
±0.8
Pulse
T=1ms, Duty=10%
IK-2
MCNI00960121-P54
MCNI00960121-P54
960-1215
54
13
55
50
±0.8
Pulse
T=1ms, Duty=10%
IK-2
MCNI00960122-P37-1
MCNI00960122-P37-1
960-1224
37
16
50
50
±0.8
Pulse
T=1ms, Duty=20%
IK-2
MCNI00960122-P50-1
MCNI00960122-P50-1
960-1224
50
16
50
50
±0.8
Pulse
T=1ms, Duty=20%
IH
MCNI00960122-P54
MCNI00960122-P54
960-1224
54
14
50
50
±0.8
Pulse
T=1ms, Duty=10%
IK-2
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