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Cu&Al Diamond Composite Material
Product Performance Benchmark
Typical Application for Package Carrier
Typical Application for Module Case
GaN on SiC RF Epi Wafer
The standard RF Epi structure
The InAlGaN barrier RF EPi structure
Cross Reference
Applications
Low-altitude Economy
Design Support
Sample
News
About Us
Who we are
Contact Us
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GaN IMFET
GaN IMFET
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RF Products
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GaN IMFET
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GaN PA (Package）
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High Power Switch
GaN IMFET
RF Products
Internal-Matched Amplifiers
GaN IMFET
GaAs IMFET
Pre-Matched Amplifiers
GaN Pre-Matched Amplifiers
Power Amplifier MMICs
GaN PA (Package）
GaN PA(Die)
GaAs PA (Package）
GaAs Saturated PA (Die）
GaAs Single-Supply PA (Die)
GaAs Linear PA (Die)
Drivers
GaAs Drivers ( Package)
High Power Switch
High Power Switch
Parametric Search Selector
Part Number
Images
Frequency Range (MHz)
Psat (dBm)
P-1 (dBm)
Gp (dB)
Work Efficiency η（%）
Vd(d)
Gain Flatness
Mode
Pulse indicators
Package
Status
MCNI092095-P50
MCNI092095-P50
9200-9500
50
8
38
32
±0.8
Pulse
T=1ms, Duty=10%
IK
MCNI092095-P53
MCNI092095-P53
9200-9500
53
8
38
32
±0.8
Pulse
T=1ms, Duty=10%
IK
MCNI093095-P42
MCNI093095-P42
9300-9500
42
8
38
28
±0.8
CW
IB
MCNI093095-P49
MCNI093095-P49
9300-9500
49
9
35
28
±0.8
Pulse
T=1ms, Duty=10%
IK
MCNI093095-P52
MCNI093095-P52
9300-9500
52
7.5
35
25
±0.8
Pulse
T=1ms, Duty=10%
IK
MCNI094102-P52
MCNI094102-P52
9400-10200
52
8
40
32
±0.8
Pulse
T=1ms, Duty=10%
IK
MCNI095100-P43L
MCNI095100-P43L
9500-10000
43
7
40
24
±0.8
CW
IB
MCNI095100-P47L
MCNI095100-P47L
9500-10000
47
8
35
28
±0.8
CW
IB
MCNI095100-P53
MCNI095100-P53
9500-10000
53
8
40
32
±0.8
Pulse
T=1ms, Duty=10%
IK
MCNI095105-P42
MCNI095105-P42
9500-10500
42
9
35
28
±0.8
CW
IB
MCNI095105-P47
MCNI095105-P47
9500-10500
47
8.5
35
28
±0.8
CW
IK
MCNI095105-P52
MCNI095105-P52
9500-10500
52
7
35
28
±0.8
Pulse
T=1ms, Duty=10%
IK
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