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Product Performance Benchmark
Typical Application for Package Carrier
Typical Application for Module Case
GaN on SiC RF Epi Wafer
The standard RF Epi structure
The InAlGaN barrier RF EPi structure
Cross Reference
Applications
Low-altitude Economy
Design Support
Sample
News
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Who we are
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GaN IMFET
GaN IMFET
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RF Products
Internal-Matched Amplifiers
GaN IMFET
GaAs IMFET
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GaN PA (Package）
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High Power Switch
GaN IMFET
RF Products
Internal-Matched Amplifiers
GaN IMFET
GaAs IMFET
Pre-Matched Amplifiers
GaN Pre-Matched Amplifiers
Power Amplifier MMICs
GaN PA (Package）
GaN PA(Die)
GaAs PA (Package）
GaAs Saturated PA (Die）
GaAs Single-Supply PA (Die)
GaAs Linear PA (Die)
Drivers
GaAs Drivers ( Package)
High Power Switch
High Power Switch
Parametric Search Selector
Part Number
Images
Frequency Range (MHz)
Psat (dBm)
P-1 (dBm)
Gp (dB)
Work Efficiency η（%）
Vd(d)
Gain Flatness
Mode
Pulse indicators
Package
Status
MCNI085096-P48
MCNI085096-P48
8500-9600
48
8.5
36
28
±0.8
CW
IK
MCNI085096-P49.5
MCNI085096-P49.5
8500-9600
49.5
8
38
28
±0.8
Pulse
T=1.2ms,Duty=25%
IK
MCNI085096-P50
MCNI085096-P50
8500-9600
50
8
36
28
±0.8
Pulse
IK
MCNI085096-P52
MCNI085096-P52
8500-9600
52
8
36
28
±0.8
Pulse
IK
MCNI085096-P53
MCNI085096-P53
8500-9600
53
8
36
32
±0.8
Pulse
T=1ms, Duty=10%
IK
MCNI085096-P54
MCNI085096-P54
8500-9600
54
9
35
48
±0.8
Pulse
T=1ms, Duty=10%
IK
MCNI090095-P47
MCNI090095-P47
9000-9500
47
7.5
38
28
±0.8
CW
IK
MCNI090095-P53
MCNI090095-P53
9000-9500
53
8
38
32
±0.8
Pulse
T=1ms, Duty=10%
IK
MCNI090096-P49
MCNI090096-P49
9000-9600
49
8
40
28
±0.8
CW
IK
MCNI090096-P55
MCNI090096-P55
9000-9600
55
9
40
40
±0.8
Pulse
T=1ms, Duty=10%
IK
MCNI090100-P37
MCNI090100-P37
9000-10000
37
8
30
28
±0.8
CW
IB
MCNI090100-P40
MCNI090100-P40
9000-10000
40
8
30
28
±0.8
CW
IB
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