MCNI8596-P52

X-Band Internally Matched GaN Device

FEATURES
  • Operating Frequency: 8.50-9.60 GHz

  • Saturated Output Power (Psat): ≥ 52 dBm

  • Power Gain(Gp): ≥8dB

  • Work Efficiency (η): ≥ 36%

  • Port Matching: Zin/Zout = 50 Ω

APPLICATIONS