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Cu&Al Diamond Composite Material
Product Performance Benchmark
Typical Application for Package Carrier
Typical Application for Module Case
GaN on SiC RF Epi Wafer
The standard RF Epi structure
The InAlGaN barrier RF EPi structure
Cross Reference
Applications
Low-altitude Economy
Design Support
Sample
News
About Us
Who we are
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GaN IMFET
GaN IMFET
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GaN IMFET
GaAs IMFET
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GaN PA (Package）
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High Power Switch
GaN IMFET
RF Products
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GaN IMFET
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GaN Pre-Matched Amplifiers
Power Amplifier MMICs
GaN PA (Package）
GaN PA(Die)
GaAs PA (Package）
GaAs Saturated PA (Die）
GaAs Single-Supply PA (Die)
GaAs Linear PA (Die)
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GaAs Drivers ( Package)
High Power Switch
High Power Switch
Parametric Search Selector
Part Number
Images
Frequency Range (MHz)
Psat (dBm)
P-1 (dBm)
Gp (dB)
Work Efficiency η（%）
Vd(d)
Gain Flatness
Mode
Pulse indicators
Package
Status
MCNI029039-P44
MCNI029039-P44
2900-3900
44
13
55
28
±0.8
CW
IK-2
MCNI029039-P48
MCNI029039-P48
2900-3900
48
10
45
28
±0.8
CW
IK
MCNI029039-P48.5
MCNI029039-P48.5
2900-3900
48.5
10
60
24
±0.8
CW
IK
MCNI030031-P55
MCNI030031-P55
3000-3100
55
12
45
40
±0.8
Pulse
T=1ms, Duty=20%
C164-1F
MCNI030034-P41
MCNI030034-P41
3000-3400
41
12
50
28
±0.8
CW
IB
MCNI030035-P35
MCNI030035-P35
3000-3500
35
14
40
28
±0.8
CW
IK-2
MCNI030035-P37
MCNI030035-P37
3000-3500
37
13
45
28
±0.8
CW
IK-2
MCNI030035-P46
MCNI030035-P46
3000-3500
46
12
50
28
±0.8
CW
IK-2
MCNI030035-P57
MCNI030035-P57
3000-3500
57
12
55
50
±0.8
Pulse
T=1ms, Duty=10%
IK
MCNI031031-P36
MCNI031031-P36
3100-3100
36
13
50
28
±0.8
CW
IK-2
MCNI031031-P44
MCNI031031-P44
3100-3100
44
12
50
28
±0.8
CW
IK-2
MCNI031031-P47
MCNI031031-P47
3100-3100
47
12
50
28
±0.8
CW
IK-2
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