X-Band Internally Matched GaN Device
Operating Frequency: 9.00-10.00 GHz
Saturated Output Power (Psat): ≥ 52 dBm
Power Gain(Gp): ≥ 8 dB
Work Efficiency (η): ≥ 35%
Port Matching: Zin/Zout = 50 Ω
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