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Cu&Al Diamond Composite Material
Product Performance Benchmark
Typical Application for Package Carrier
Typical Application for Module Case
GaN on SiC RF Epi Wafer
The standard RF Epi structure
The InAlGaN barrier RF EPi structure
Cross Reference
Applications
Low-altitude Economy
Design Support
Sample
News
About Us
Who we are
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GaN PA (Package)
GaN PA (Package)
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RF Products
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GaN IMFET
GaAs IMFET
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GaN PA (Package)
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High Power Switch
GaN PA (Package)
RF Products
Internal-Matched Amplifiers
GaN IMFET
GaAs IMFET
Pre-Matched Amplifiers
GaN Pre-Matched Amplifiers
Power Amplifier MMICs
GaN PA (Package)
GaN PA(Die)
GaAs PA (Package)
GaAs Saturated PA (Die)
GaAs Single-Supply PA (Die)
GaAs Linear PA (Die)
Drivers
GaAs Drivers ( Package)
High Power Switch
High Power Switch
Parametric Search Selector
Part Number
Images
Frequency Range (MHz)
Psat (dBm)
P-1 (dBm)
Gp (dB)
Work Efficiency η(%)
Vd(d)
Gain Flatness
Mode
Pulse indicators
Package
Status
MCNM070076-P41-IJ
MCNM070076-P41-IJ
7000-7600
41
21
40
28
±0.8
CW
IJ
MCNM070090-P43-IJ
MCNM070090-P43-IJ
7000-9000
43
18
38
28
±0.8
CW
IJ
MCNM080085-P38-IJ
MCNM080085-P38-IJ
8000-8500
38
17
28
28
±0.8
CW
IJ
MCNM080090-P41-IJ
MCNM080090-P41-IJ
8000-9000
41
17
28
28
±0.8
CW
IJ
MCNM080120-P36-IJ
MCNM080120-P36-IJ
8000-12000
36
21
35
28
±0.8
±0.8
CW
MCNM080120-P40-IJ
MCNM080120-P40-IJ
8000-12000
40
17
30
28
±0.8
CW
IJ
MCNM080120-P42-IJ
MCNM080120-P42-IJ
8000-12000
42
18
35
28
±0.8
CW
IJ
MCNM080120-P45-IJ
MCNM080120-P45-IJ
8000-12000
45
18
38
28
±0.8
CW
IJ
MCNM080120-P46-IJ
MCNM080120-P46-IJ
8000-12000
46
21
35
28
±0.8
CW
IJ
MCNM080120-P47-IJ
MCNM080120-P47-IJ
8000-12000
47
21
38
28
±0.8
Pulse
T=1ms, Duty=10%
IJ
MCNM080120-P47 .5-IJ
MCNM080120-P47 .5-IJ
8000-12000
47.5
21
38
28
±0.8
Pulse
T=1ms, Duty=10%
IJ
MCNM080120-P48-IJ
MCNM080120-P48-IJ
8000-12000
48
20
38
28
±0.8
Pulse
T=1ms, Duty=10%
IJ
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