MCNI1214-P51

L-Band Internally Matched GaN Device

FEATURES
  • Operating Frequency: 1.20–1.40 GHz

  • Saturated Output Power (Psat): ≥51.0dBm

  • Power Gain(Gp): ≥13.0 dB

  • Work Efficiency (η): ≥50%

  • Port Matching: Zin/Zout = 50 Ω


APPLICATIONS