MCNI2735-P55

S-Band Internally Matched GaN Device

FEATURES
  • Operating Frequency: 2.70-3.50 GHz

  • Saturated Output Power (Psat): ≥55 dBm

  • Power Gain(Gp): ≥11 dB

  • Work Efficiency (η): 50%(Type)

  • Port Matching: Zin/Zout = 50 Ω

APPLICATIONS