MCNI2737-P40

S-Band Internally Matched GaN Device

FEATURES
  • Operating Frequency: 2.70-3.70 GHz 

  • Saturated Output Power (Psat): ≥40 dBm

  • Power Gain(Gp): ≥12 dB

  • Work Efficiency (η): ≥ 45%

  • Port Matching: Zin/Zout = 50 Ω

APPLICATIONS