MCNI5867-P40

C-Band Internally Matched GaN Device

FEATURES
  • Operating Frequency: 5.80-6.70 GHz

  • Saturated Output Power (Psat): ≥ 40 dBm

  • Power Gain: ≥12 dB

  • Work Efficiency (η): ≥ 45

  • Port Matching: Zin/Zout = 50 Ω

APPLICATIONS