MCNI5867-P51

C-Band Internally Matched GaN Device

FEATURES
  • Operating Frequency: 5.80-6.70 GHz

  • Saturated Output Power (Psat): ≥ 51 dBm

  • Power Gain(Gp): ≥ 10 dB

  • Work Efficiency (η): ≥ 45%

  • Port Matching: Zin/Zout = 50 Ω

APPLICATIONS